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STD11NM60N中文资料意法半导体数据手册PDF规格书
STD11NM60N规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号：
STD11NM60N
- 功能描述：
MOSFET N-channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-252 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST |
24+ |
TO-252 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ST |
24+ |
D-PAK |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
询价 | ||
ST |
24+ |
TO-252 |
7500 |
询价 | |||
ST |
24+ |
08+ |
2 |
原装现货假一罚十 |
询价 | ||
ST/意法 |
24+ |
DPAK |
3800 |
大批量供应优势库存热卖 |
询价 | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 | ||
TH/韩国太虹 |
2048+ |
D-PAK |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 |
