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STD11NM60N中文资料意法半导体数据手册PDF规格书
STD11NM60N规格书详情
描述 Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STD11NM60N
- 功能描述:
MOSFET N-channel MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
23+ |
DPAK |
65400 |
询价 | |||
ST |
25+ |
DPAK |
9800 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST专家 |
DPAK |
23500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST/意法 |
24+ |
NA/ |
3289 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268577邹小姐 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
16+17+ |
TO252 |
2500 |
原装现货 |
询价 | ||
ST |
24+ |
TO-252 |
7500 |
询价 |


