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STD11N65M5中文资料意法半导体数据手册PDF规格书
STD11N65M5规格书详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100 avalanche tested
Applications
■ Switching applications
产品属性
- 型号：
STD11N65M5
- 功能描述：
MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh V MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST |
15+ |
TO-252 |
11056 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST(意法半导体) |
2024+ |
DPAK |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
ST |
23+ |
TO252 |
6800 |
原装正品,支持实单 |
询价 | ||
ST/意法 |
21+ |
TO-252-3 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
ST/意法 |
15+ |
TO-252 |
11056 |
询价 | |||
ST/意法 |
21+ |
TO-252-3 |
5590 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ST/意法 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
询价 |
