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STD11N65M5中文资料意法半导体数据手册PDF规格书
STD11N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100 avalanche tested
Applications
■ Switching applications
产品属性
- 型号：
STD11N65M5
- 功能描述：
MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh V MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
24+ |
DPAK |
3800 |
大批量供应优势库存热卖 |
询价 | ||
ST/意法 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
询价 | ||
STM |
TO-252 |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
STMICROELECTRONICS |
21+ |
标准封装 |
100 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
询价 | ||
ST |
15+ |
TO-252 |
11056 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
15+ |
TO-252 |
11056 |
询价 | |||
ST/意法 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
20+ |
TO-252-3 |
69052 |
原装优势主营型号-可开原型号增税票 |
询价 |
