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STD11NM50N中文资料PDF规格书
STD11NM50N规格书详情
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
产品属性
- 型号:
STD11NM50N
- 功能描述:
MOSFET POWER MOSFET N-CH 500V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
STM |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
20+ |
TO-252-3 |
69052 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST意法中高压MOS管 |
24+23+ |
TO-252 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
10000 |
原装公司现货 |
询价 | ||
ST(意法) |
22+ |
BGA-100 |
6800 |
询价 | |||
ST/意法半导体 |
22+ |
TO-252-3 |
6005 |
原装正品现货 可开增值税发票 |
询价 | ||
ST/意法 |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 |