N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

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STMICROELECTRONICS

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N-channel 500 V, 0.4 廓, 8.5 A MDmesh??II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：663.06 Kbytes 页数：16 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：250.6 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道500 V、0.40 Ohm典型值、8.5 A MDmesh II功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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