首页>STD11NM60N>规格书详情
STD11NM60N中文资料意法半导体数据手册PDF规格书
STD11NM60N规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号：
STD11NM60N
- 功能描述：
MOSFET N-channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
ST |
1709+ |
TO-252/D- |
32500 |
普通 |
询价 | ||
ST |
20+ |
D-PAK |
32500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
21+ |
D-PAK |
39 |
原装现货假一赔十 |
询价 | |||
ST/意法 |
21+ |
D-PAK |
6000 |
原装正品 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
2020+ |
TO-252 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
ST/意法 |
23+ |
IPAKTO-251 |
10000 |
公司只做原装正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
询价 |
