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STD11NM60N-1中文资料PDF规格书
STD11NM60N-1规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STD11NM60N-1
- 功能描述:
MOSFET N Ch 600V 0.37 Ohm 10A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2020+ |
TO252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST/意法 |
23+ |
TO252DPAK |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST |
TO-251-3 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
ST/意法 |
TO252 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST-意法半导体 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
1746+ |
to252 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ST |
08+(pbfree) |
TO252DPAK |
8866 |
询价 | |||
ST |
23+ |
IPAKTO-251 |
37650 |
全新原装真实库存含13点增值税票! |
询价 |