N-channel 30 V, 2.4 m廓 , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Features ■ 100 avalanche tested ■ Logic level drive Applications ■ S

文件：1.01349 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：981.1 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道30 V、0.0024 Ohm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. • 100% avalanche tested \n• Logic level drive;

ST

意法半导体

N-channel 30 V, 2.4 m廓 , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Features ■ 100 avalanche tested ■ Logic level drive Applications ■ S

文件：1.01349 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体