STD155N3LH6

N沟道30 V、0.0024 Ohm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装; • 100% avalanche tested \n• Logic level drive;

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.\n\n

STD155N3LH6

N-channel 30 V, 2.4 m廓 , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETsexhibitsthelowestRDS(on)inallpackages. Features ■100avalanchetested ■Logicleveldrive Applications ■S

STD155N3LH6

N-Channel 30-V (D-S) MOSFET

STB155N3LH6

N-channel30V,2.4m廓,80A,DPAK,DPAKSTripFETVIDeepGATEPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETsexhibitsthelowestRDS(on)inallpackages. Features ■100avalanchetested ■Logicleveldrive Applications ■S

STD1NK80ZT4

ST
TO-252

ST