N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co

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STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

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ISC

无锡固电

N沟道100 V、0.06 Ohm典型值、23 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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TO-252

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