丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • Higher VDSS rating • Excellent switching performance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：299.97 Kbytes 页数：2 Pages

ISC

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N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages

Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring hi

文件：1.02109 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N沟道650 V、0.198 Ohm典型值、15 A MDmesh M5功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and su • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

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N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

文件：954.65 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

文件：954.65 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体