N沟道600 V、0.28 Ohm典型值、12 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：453.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：383.93 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.32Ω(Max)@VGS= 10V APPLICATIONS ·Switching application

文件：301.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.290 廓 typ., 8 A MDmesh??M2 Power MOSFET in a PowerFLAT??5x6 HV package

文件：479.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体