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CED60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

STTH60P03S

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH60P03SW

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

UTT60P03

-60A,-30V,P-CHANNELPOWERMOSFETS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

WSF60P03

P-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微硕半岛体深圳市龍華區大浪街道高峰社區忠信路9號匯億大廈807

供应商型号品牌批号封装库存备注价格
SHD
2022+
TO-252
7500
原厂代理 终端免费提供样品
询价
SHD
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SHD
2022+
TO-252
30000
进口原装现货供应,绝对原装 假一罚十
询价
SHD
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
询价
SHD
20+
TO-252
7500
现货很近!原厂很远!只做原装
询价
23+
N/A
75000
一级代理放心采购
询价
Hongfa 宏发继电器
24+23+
DIPSMT
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
SENSITRON
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
23+
N/A
67000
一级代理放心采购
询价
YAGEO(国巨)
23+
SOD882
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多SHD60P03L供应商 更新时间2024-6-17 10:04:00