P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V

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FAIRCHILD

仙童半导体

P-Channel 2.5V Specified PowerTrench MOSFET

General Description\nThis P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V\n                       RDS(ON) = 17.5 mΩ @ VGS = –2.5 V\n• Fast switching speed.\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capabilityApplications\n• Power management\n• Load switch\n• Battery p;

ONSEMI

安森美半导体

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研华科技