丝印：D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：730.25 Kbytes 页数：5 Pages

KERSEMI

丝印：D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：896.46 Kbytes 页数：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

文件：104.11 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：88.95 Kbytes 页数：7 Pages

INTERSIL

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：88.95 Kbytes 页数：7 Pages

INTERSIL