60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

文件：104.11 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

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INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -60A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery

文件：79.72 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery

文件：79.72 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

-60A, -30V, P-CHANNEL POWER MOSFETS

文件：168.72 Kbytes 页数：5 Pages

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