WSF60P03

P-Ch MOSFET

CED60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CEU60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg