No alignment required in production

文件：1.42884 Mbytes 页数：33 Pages

SILABS

芯科科技

专有 EZRadio 1 GHz 以下无线 IC

Si4420 EZRadioPRO ISM 波段采用 TSSOP16 封装。

Silicon Labs

芯科

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

文件：92.54 Kbytes 页数：1 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00568 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

HEXFET Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

文件：113.81 Kbytes 页数：8 Pages

IRF

Single N-Channel Logic Level PowerTrencha MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

文件：281.88 Kbytes 页数：3 Pages

Fairchild

仙童半导体

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor

文件：254.01 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

文件：92.54 Kbytes 页数：1 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET

Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

文件：119.92 Kbytes 页数：8 Pages

IRF

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08611 Mbytes 页数：9 Pages

VBSEMI

微碧半导体