SI4420DY中文资料PDF规格书
SI4420DY规格书详情
Description
This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive
产品属性
- 型号：
SI4420DY
- 功能描述：
MOSFET 30V 400a N-Ch MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
1822+ |
SOP-8 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
SOP8 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
VISHAY/威世 |
23+ |
SMD |
5250 |
百分百进口原装环保整盘 |
询价 | ||
SI |
22+ |
SOP |
7500 |
十年品牌!原装现货!!! |
询价 | ||
VISHAY/威世 |
22+ |
SOP-8 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
VISHAY |
2018+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
VISHAY |
23+ |
SOP8 |
5000 |
原装现货,优势热卖 |
询价 | ||
SIL |
02+ |
SOIC-8 |
6000 |
绝对原装自己现货 |
询价 | ||
VISHAI |
23+ |
SOP-8 |
40000 |
专做原装正品,假一罚百! |
询价 |
