丝印：AP60P03D；Package：TO-252；-30V P-Channel Enhancement Mode MOSFET

文件：1.59007 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

MOSFET场效应管

Leiditech

雷卯电子

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：661.21 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：358.87 Kbytes 页数：7 Pages

NCEPOWER

新洁能

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

文件：104.11 Kbytes 页数：6 Pages

Fairchild

仙童半导体