10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET

Description\nThese products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as\nsw • 10A, 30V\n• rDS(ON)= 0.200Ω\n• Temperature CompensatingPSPICE Model\n• PSPICE Thermal Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175oC Operating Temperature;

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