14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：119.56 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：214.73 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering S

文件：74.4 Kbytes 页数：8 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.94 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：14N05L；Package：TO-252；60V N-Channel MOSFET

Features Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve • 175℃ Operating Temperature VDS (V) = 60V •• RDS(ON)

文件：668.74 Kbytes 页数：7 Pages

UMW

友台半导体

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

文件：213.77 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：119.56 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：214.73 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：14N05L；Package：TO-252；60V N-Channel MOSFET

Features Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve • 175℃ Operating Temperature VDS (V) = 60V •• RDS(ON)

文件：668.74 Kbytes 页数：7 Pages

UMW

友台半导体

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=14A@ TC=25℃ Drain Source Voltage -VDSS= 50V(Min) Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.58 Kbytes 页数：2 Pages

ISC

无锡固电