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RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05L

Marking:14N05L;Package:TO-252;60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

isc N-Channel MOSFET Transistor

FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05LSM

Marking:14N05L;Package:TO-252;60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    RFD14N05L

  • 功能描述:

    MOSFET TO-251AA N-Ch Power

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
I-PAK
30000
晶体管-分立半导体产品-原装正品
询价
FSC
15+
原厂原装
11400
进口原装现货假一赔十
询价
FAIRCHILD/仙童
24+
TO-251
15000
只做原厂渠道 可追溯货源
询价
onsemi(安森美)
24+
TO-251AA
7845
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
24+
TO-251
18500
全网低价,原装原包
询价
FAIRCHILDONSEMICONDUCTOR
21+
NA
7125
只做原装,假一罚十
询价
Fairchild(飞兆/仙童)
24+
N/A
11048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
FAI
24+
17304
询价
更多RFD14N05L供应商 更新时间2025-5-1 14:14:00