YFZVFH39B

Marking：NX；Package：SOD-323HE；Zener Diode

YFZVFH39B

Marking：NX；Package：SOD-323HE；Zener Diode

YFZVFH39B

Marking：NX；Package：SOD-323HE；Zener Diode

YFZVFH39B

Marking：NX；Package：SOD-323HE；Zener Diode

YFZVFH39B

Marking：NX；Package：SOD-323HE；Zener Diode

KTA1136EUAE-TR

Marking：NXYWZaabbccc；Package：TQFN44-16；IEEE 802.3af PoE PD with Integrated DC-DC Controller and 13W Power FET

Features •ComplianttoIEEE®Std.802.3af-2003 •SupportsType1operationforIEEE®802.3at- 2009andIEEE®802.3bt-2018 •IntegratedDC-DCControllerwithrobust150V, 0.7Ωtyp.supportingbothisolatedandnonisolated applications •LowRDS_ONHot-SwapFET,0.49Ωtyp. •Adjustablesw

NEX10000AUB

Marking：NX12A；Package：SOT8054-1；120 mA dual output LCD bias power supply

1.Generaldescription TheNEX10000AisapowersupplyICproviding programmablepositiveandnegativeoutputvoltages forTFT-LCDpanels.Thedevicefeaturesanintegrated boostconverter,LDOregulatorandanegativecharge pump.Thedevicerequiresonlyasingleinductor allowingforasm

NXB0104PW

Marking：NXB0104；Package：SOT402-1；Dual supply translating transceiver; auto direction sensing; 3-state

1.Generaldescription TheNXB0104isa4-bit,dualsupplytranslatingtransceiverwithautodirectionsensing,that enablesbidirectionalvoltageleveltranslation.Itfeaturestwo4-bitinput-outputports(AnandBn), oneoutputenableinput(OE)andtwosupplypins(VCC(A)andVCC(B)).VCC(A

NXB0104PW-Q100

Marking：NXB0104；Package：TSSOP14；Dual supply translating transceiver; auto direction sensing; 3-state

1.Generaldescription TheNXB0104-Q100isa4-bit,dualsupplytranslatingtransceiverwithautodirectionsensing,that enablesbidirectionalvoltageleveltranslation.Itfeaturestwo4-bitinput-outputports(AnandBn), oneoutputenableinput(OE)andtwosupplypins(VCC(A)andVCC(B)).

NXH003P120M3F2PTHG

Marking：NXH003P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH003P120M3F2PTHGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−