NXH010P120MNF1PNG

Marking：NXH010P120MNF1PNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTG

Marking：NXH010P120MNF1PTG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTG

Marking：NXH010P120MNF1PTG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTNG

Marking：NXH010P120MNF1PTNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTNG

Marking：NXH010P120MNF1PTNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P90MNF1PG

Marking：NXH010P90MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins T

NXH010P90MNF1PG

Marking：NXH010P90MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH010P90MNF1PTG

Marking：NXH010P90MNF1PTG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins T

NXH010P90MNF1PTG

Marking：NXH010P90MNF1PTG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH011F120M3F2PTHG

Marking：NXH011F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

TheNXH011F120M3F2PTHGisapowermodulecontaining 11m/1200VSiCMOSFETfull−bridgeandathermistorwithHPS DBCinanF2package. Features 11m/1200VM3SSiCMOSFETFull−Bridge HPSDBC Thermistor OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−