NXH020U90MNF2PTG

Marking：NXH020U90MNF2PTG；Package：F2-VIENNA；Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package

TheNXH020U90MNF2isapowermodulecontainingaVienna Rectifiermoduleconsistingoftwo10m,900VSiCMOSFETs,two 100A,1200VSiCdiodesandathermistorinanF2package. Features •NeutralPoint:10m,900VSiCMOSFETs •BoostDiodes:100A,1200VSiCDiodes •Thermistor •P

NXH040F120MNF1PG

Marking：NXH040F120MNF1PG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1package. Features •40m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •Press−FitPins •

NXH040F120MNF1PG

Marking：NXH040F120MNF1PG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1 package. Features •40m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •Press−FitPins

NXH040F120MNF1PTG

Marking：NXH040F120MNF1PTG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1package. Features •40m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •Press−FitPins •

NXH040F120MNF1PTG

Marking：NXH040F120MNF1PTG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

TheNXH040F120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFETfullbridgeandathermistorinanF1 package. Features •40m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •Press−FitPins

NXH040P120MNF1PG

Marking：NXH040P120MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •40m/1200VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH040P120MNF1PG

Marking：NXH040P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •40m/1200VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH040P120MNF1PTG

Marking：NXH040P120MNF1PTG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •40m/1200VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH040P120MNF1PTG

Marking：NXH040P120MNF1PTG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH040P120MNF1isapowermodulecontainingan 40m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •40m/1200VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH100B120H3Q0PG

Marking：NXH100B120H3Q0PG；Package：Q0BOOST；Dual Boost Power Module

TheNXH100B120H3Q0isapowermodulecontainingadualboost stage.TheintegratedfieldstoptrenchIGBTsandSiCDiodesprovide lowerconductionlossesandswitchinglosses,enablingdesignersto achievehighefficiencyandsuperiorreliability. Features •1200VUltraFieldStopIGBTs •