Power MOSFET

文件：131.39 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

文件：92.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS=25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.769 Kbytes 页数：2 Pages

ISC

无锡固电

D-Sub Receptacle Contact Solder Attachment For RG58, RG141, RG303

文件：253.06 Kbytes 页数：2 Pages

PASTERNACK