Power MOSFET 52 Amps, 100 Volts

文件：72.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：990.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.87 Kbytes 页数：2 Pages

ISC

无锡固电