isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes 页数：8 Pages

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功率 MOSFET，100V，52A，30 mΩ，单 N 沟道，D2PAK

N 沟道，增强模式，D2PAK • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Avalanche Energy Specified\n• IDSS and RDS(on) Specified at Elevated Temperature\n• Mounting Information Provided for the D2PAK Package\n• Pb-Free Packages are Available;

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N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Enhancement−Mode D2PAK

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安森美半导体