MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A • Shielded Gate MOSFET Technology\n• Optimized Switching performance\n• Max RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A\n• Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching\n• 50% Lower Qrr than other MOSFET Suppliers\n• High efficiency with lower switching spike and EM;

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MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 5.0 m, 139 A

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 139A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

MOSFET - N-Channel Shielded Gate PowerTrench

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安森美半导体