NESG270034-A说明书PDF资料原装现货瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG270034-A	文件：137.58 Kbytes Page：2 Pages	RF & Microwave device 文件：137.58 Kbytes 页数：2 Pages	RENESAS 瑞萨	RENESAS
NESG270034-AZ	文件：320.27 Kbytes Page：13 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9 文件：320.27 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
NESG270034-AZ	文件：349.47 Kbytes Page：11 Pages	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) 文件：349.47 Kbytes 页数：11 Pages	CEL	CEL
NESG270034	文件：320.27 Kbytes Page：13 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9 文件：320.27 Kbytes 页数：13 Pages	RENESAS 瑞萨	RENESAS
NESG270034	文件：349.47 Kbytes Page：11 Pages	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) 文件：349.47 Kbytes 页数：11 Pages	CEL	CEL

更多NESG270034-A供应商更新时间2025-10-7 9:22:00