首页 >NCE2N7002K>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | SUTEX | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | Zetex | ||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant. | Calogic Calogic, LLC | Calogic | ||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER | STANSONStanson Technology Stanson 科技 | STANSON | ||
N-ChannelEnhancementModeFieldEffectTransistor | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical | semiWell semiWell | semiWell | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelSmallSignalMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNELTRANSISTOR Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
DMOSTransistors(N-Channel) | GE GE Industrial Company | GE | ||
AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NCE/新洁能 |
24+23+ |
TO-252 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
NCE/新洁能 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
NCE/新洁能 |
SOP8 |
21604 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NCE |
1822+ |
SOP-8 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NCE |
2020+ |
SOP-8 |
412000 |
原装正品,诚信经营。 |
询价 | ||
NCE/新洁能 |
15+ |
SOP |
70 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
NCE |
19+ |
SOP-8 |
24000 |
正规代理商 现货 |
询价 | ||
NCE |
2020+ |
SOP-8 |
45480 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
NCE |
20+ |
SOP-8 |
43000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NCEPOWER |
23+ |
SOP-8 |
63000 |
绝对原厂原装,长期优势可定货 |
询价 |
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