首页 >MTD20N06HD>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andinautomotiveandgeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-channelTrenchMOS??standardlevelFET Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS™technology. Features ■Standardlevelcompatible ■Isolatedpackage. Applications ■DCmotorcontrol ■Synchronousrectification ■DC-to-DCconverters ■Generalpur | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelEnhancementModeFieldEffectTransistor | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-CHANNELENHANCEMENTMODE?쓀LTRAHIGHDENSITY??POWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthelatestdevelopmentinlowvoltagetechnology.Theultrahighcelldensityprocess(UHD)producedwithfinegeometriesonadvancedequipmentgivesthedeviceextremelylowRDS(on)aswellasgoodswitchingperformanceandhighavalancheene | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET GeneralFeatures ●VDS=60V,ID=20A RDS(ON) | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20A,60VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
N-ChMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微硕半岛体深圳市龍華區大浪街道高峰社區忠信路9號匯億大廈807 | WIINSOK | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE |
详细参数
- 型号：
MTD20N06HD
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N D-PAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2024+实力库存 |
5000 |
只做原厂渠道 可追溯货源 |
询价 | |||
ON |
360000 |
原厂原装 |
1305 |
询价 | |||
MOT |
95 |
TQ |
1030 |
询价 | |||
ON |
2016+ |
TO252 |
2654 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ONS |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
ON |
17+ |
TO-252 |
6200 |
询价 | |||
ON |
2017+ |
26589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | |||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
ON |
20+ |
TO-252 |
90000 |
原装正品现货/价格优势 |
询价 |
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