TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)

文件：380.11 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-Channel 60 V (D-S) MOSFET

文件：1.00292 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel enhancement-mode silicon gate, 10A, 60V

恩XP

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

文件：206.03 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Power MOSFET 12Amps, 60 Volts

文件：81.39 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features 12 A, 60 V. RDS(ON) = 0.15 Ω @ VGS = 10 V Low gate charge. Fast switching spe

文件：380.65 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体