N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche ene

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STMICROELECTRONICS

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N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

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N-Channel 60-V (D-S) MOSFET

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

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STMICROELECTRONICS

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

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STMICROELECTRONICS

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Silicon N-Channel MOSFET

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司