isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

丝印：25NF20；Package：DPAK；Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET??Power MOSFET in a DPAK package

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STMICROELECTRONICS

意法半导体

汽车级N沟道200 V、0.10 Ohm典型值、18 A STripFET功率MOSFET，DPAK封装

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high pa • Designed for automotive applications and AEC-Q101 qualified \n• Extremely low gate charge \n• Exceptional dv/dt capability \n• Low gate input resistance \n• 100% avalanche tested;

ST

意法半导体

N-Channel 200 V (D-S) MOSFET

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VBSEMI

微碧半导体