N-Channel 200 V (D-S) MOSFET

文件：1.00822 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：25NF20；Package：DPAK；Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET??Power MOSFET in a DPAK package

文件：848.51 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET??Power MOSFET in a DPAK package

文件：848.51 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：318.44 Kbytes 页数：2 Pages

ISC

无锡固电