PHP20N06E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andinautomotiveandgeneralpurposeswitchingapplications.

PHP20N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP20N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

PHP20N06T

N-channelTrenchMOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters.

PHP20N06T

N-channelTrenchMOSstandardlevelFET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc

PHX20N06T

N-channelTrenchMOS??standardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS™technology. Features ■Standardlevelcompatible ■Isolatedpackage. Applications ■DCmotorcontrol ■Synchronousrectification ■DC-to-DCconverters ■Generalpur

PJD20N06A

60VN-ChannelEnhancementModeMOSFET

SK20N06A

N-ChannelEnhancementModeFieldEffectTransistor

SSD20N06

N-ChEnhancementModePowerMOSFET

STD20N06

N-CHANNELENHANCEMENTMODE?쓀LTRAHIGHDENSITY??POWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthelatestdevelopmentinlowvoltagetechnology.Theultrahighcelldensityprocess(UHD)producedwithfinegeometriesonadvancedequipmentgivesthedeviceextremelylowRDS(on)aswellasgoodswitchingperformanceandhighavalancheene