N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Low thermal resistance. Applications ■ DC-to-DC converters ■ Switched-mode power supplies.

文件：90.69 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher ope

文件：220.3 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：333.96 Kbytes 页数：14 Pages

NEXPERIA

安世

N-Channel 100-V (D-S) MOSFET

文件：937.05 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance;

Nexperia

安世