TRANSIENT ABSORPTION ZENER

文件：80.24 Kbytes 页数：2 Pages

MICROSEMI

美高森美

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ✔ Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ✔ Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ✔ Weight 46 grams (Approximate) ✔ Flammability rating UL 94V-0 ✔ Device Marking: Logo & Part Number ✔ Screening Available Upon Request - The PHP &

文件：61.55 Kbytes 页数：4 Pages

PROTEC

ac power bus voltage suppressor

Description The PHP and PIP Series of devices are designed in accordance with DOD-STD-1399, section 300 interface standard and MIL-STD704A for shipboard systems, electrical power and alternating current. When large voltage transients endanger voltage sensitive components, this series provides r

文件：377.49 Kbytes 页数：5 Pages

PROTEC

Transient Voltage Suppressor, Unidirectional

FEATURES: ♦ Equivalent Industry Standard Part Numbers – PHP8.4 to PHP500 & PIP8.4 to PIP500 ♦ 7,500 and 15,000 Watts Peak Pulse Power Dissipation ♦ Available in ranges from 8.4 to 500 Volts ♦ Each device is 100 tested ♦ Designed for Military (PHP Series) and Commercial (PIP Series)

文件：52.56 Kbytes 页数：3 Pages

SENSITRON

AC POWER BUS VOLTAGE SUPPRESSOR

文件：379.94 Kbytes 页数：5 Pages

PROTEC

TRANSIENT ABSORPTION ZENER

文件：115.85 Kbytes 页数：2 Pages

MICROSEMI

美高森美

AC POWER BUS VOLTAGE SUPPRESSOR

文件：72.81 Kbytes 页数：4 Pages

PROTEC

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only Features and benefits ■ Low conduct

文件：248.27 Kbytes 页数：14 Pages

恩XP

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

PHI