N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only Features and benefits ■ Low conduct

文件：248.27 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：370.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description\nStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic\npackage using TrenchMOS technology. This product is designed and qualified for use in\ncomputing, communications, consumer and industrial applications only.Features and benefits\nLow conduction

恩XP

恩智浦