| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PHP225 | Dual P-channel enhancement mode MOS transistor DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. 文件:119.81 Kbytes 页数:12 Pages | PHI PHI | PHI | |
PHP225 | Dual P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches 文件:1.05955 Mbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | |
PHP225 | Nexperia B.V. All rights reserved [NEXPERIA]^1325 1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an 文件:778.52 Kbytes 页数:12 Pages | NEXPERIA 安世 | NEXPERIA | |
PHP225 | Dual P-channel intermediate level FET 文件:181.2 Kbytes 页数:11 Pages | 恩XP | 恩XP | |
PHP225 | PHP225 - Dual P-channel intermediate level FET Dual P-channel intermediate level FET - Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics; | Nexperia 安世 | Nexperia | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:371.55 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-channel TrenchMOS standard level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ General ind 文件:93.72 Kbytes 页数:13 Pages | PHI PHI | PHI | ||
Dual P-channel intermediate level FET 文件:181.2 Kbytes 页数:11 Pages | 恩XP | 恩XP | ||
Small signal MOSFETs | Nexperia 安世 | Nexperia |
技术参数
- Package name:
SO8
- Product status:
Production
- Channel type:
P
- Number of transistors:
2
- V_DS [max] (V):
-30
- R_DSon [max] @ V_GS = 10 V (mΩ):
250
- R_DSon [max] @ V_GS = 4.5 V (mΩ):
400
- T_j [max] (°C):
150
- Q_GD [typ] (nC):
3
- Q_G(tot) [typ] @ V_GS = 10 V (nC):
10
- P_tot [max] (W):
2
- Automotive qualified:
N
- C_iss [typ] (pF):
250
- C_oss [typ] (pF):
140
- Date:
2011-01-04
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
19+ |
SOP8 |
31500 |
询价 | |||
恩XP |
25+ |
SOP-8 |
20300 |
NXP/恩智浦原装特价PHP225即刻询购立享优惠#长期有货 |
询价 | ||
Bychip |
23+ |
SOP8 |
10000 |
高品质替代,技术支持,参数选型 |
询价 | ||
恩XP |
25+ |
SOP-8 |
22500 |
全新原装正品支持含税 |
询价 | ||
PHI |
00+ |
SMD8 |
5552 |
全新原装100真实现货供应 |
询价 | ||
ST |
10+ |
SMD |
7800 |
全新原装正品,现货销售 |
询价 | ||
PHI |
24+ |
SOP-3.9-8P |
45000 |
询价 | |||
PHI |
23+ |
SOP-8 |
7000 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
恩XP |
25+ |
SOP-8 |
88250 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
PHI |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 |
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