N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

文件：99.37 Kbytes 页数：12 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 72mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS™ transistor

GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.FEATURES\n• ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• Low thermal resistanceApplications:-\n• d.c. to d.c. converters\n• switched mode power supplie • ’Trench’ technology\n• Low on-state resistance\n• Fast switching\n• Low thermal resistanceApplications:-\n• d.c. to d.c. converters\n• switched mode power supplies\n• T.V. and computer monitor power supplies;

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching Applications:- • d.c. to d.c. converters • switched mode power supplies • T.V.

文件：61.65 Kbytes 页数：8 Pages

PHI

PHI