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PHP33N10	文件：73.13 Kbytes Page：7 Pages	PowerMOS transistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturingstableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrolcircuitsan	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP33N10	文件：949.42 Kbytes Page：7 Pages	N-Channel 100-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
33N10	文件：67.44 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
33N10	文件：245.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10	文件：566.72 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA33N10	文件：363.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10L	文件：363.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10L	文件：642.58 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF33N10	文件：571.55 Kbytes Page：8 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF33N10	文件：421.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.052Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF33N10L	文件：647.27 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：585.35 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：1.23197 Mbytes Page：9 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：330.83 Kbytes Page：9 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：309.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：309.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：1.89098 Mbytes Page：8 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：660.05 Kbytes Page：9 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：317.36 Kbytes Page：2 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10LTM	文件：1.89098 Mbytes Page：8 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
PHP33N10
制造商：
PHILIPS
制造商全称：
NXP Semiconductors
功能描述：
PowerMOS transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	PHP33N10	PHI	19+	TO-220	17585		询价
深圳市特顺芯科技有限公司	PHP33N10				3000	公司存货	询价
深圳市华来深电子有限公司	PHP33N10	NXP	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市科恒伟业电子有限公司	PHP33N10	NXP	1822+	TO-220	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	PHP33N10		23+	N/A	46380	正品授权货源可靠	询价
深圳市赛芯源科技有限公司	PHP33N10	NXP	18+	TO-220	41200	原装正品,现货特价	询价
深圳市锐视安科技有限公司	PHP33N10	PHI	9718	TO-220	50	特价销售欢迎来电!!	询价
深圳兆威电子有限公司	PHP33N10	VB	2019	TO220AB	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	PHP33N10	N	23+	TOTO-220AB	37650	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	PHP33N10	PHILIPS	2020+	SOT78(TO-220)	16800	绝对原装进口现货,假一赔十,价格优势!?	询价

更多PHP33N10供应商更新时间2024-4-30 16:04:00

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