M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Fairchild

仙童半导体

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

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ISC

无锡固电

Power MOSFET 12 Amps, 60 Volts

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ONSEMI

安森美半导体

Power MOSFET 12 Amps, 60 Volts

文件：86.03 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

Power MOSFET 12 Amps, 60 Volts

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ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our\n50 and 60 volt TMOS devices. Just as with our TMOS E–FET des

恩XP

功率 MOSFET，12A，60V

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm • Avalanche Energy Specified\n• IDSS and VDS(on) Specified at Elevated Temperature;

ONSEMI

安森美半导体