N-channel TrenchMOS??standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Standard level compatible ■ Isolated package. Applications ■ DC motor control ■ Synchronous rectification ■ DC-to-DC converters ■ General pur

文件：91.43 Kbytes 页数：12 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS™ standard level FET

恩XP

60V N-Channel Enhancement Mode MOSFET

文件：401.61 Kbytes 页数：8 Pages

PANJIT

強茂

N-Channel Enhancement Mode Field Effect Transistor

文件：614.96 Kbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Ch Enhancement Mode Power MOSFET

文件：354.27 Kbytes 页数：4 Pages

SECOS

喜可士