PHX20N06T

N-channel TrenchMOS??standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinafullyisolatedplasticpackageusingTrenchMOS™technology. Features ■Standardlevelcompatible ■Isolatedpackage. Applications ■DCmotorcontrol ■Synchronousrectification ■DC-to-DCconverters ■Generalpur

PHX20N06T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12.9A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PJD20N06A

60VN-ChannelEnhancementModeMOSFET

SK20N06A

N-ChannelEnhancementModeFieldEffectTransistor

SSD20N06

N-ChEnhancementModePowerMOSFET

STD20N06

N-CHANNELENHANCEMENTMODE?쓀LTRAHIGHDENSITY??POWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthelatestdevelopmentinlowvoltagetechnology.Theultrahighcelldensityprocess(UHD)producedwithfinegeometriesonadvancedequipmentgivesthedeviceextremelylowRDS(on)aswellasgoodswitchingperformanceandhighavalancheene

STP20N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STP20N06FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

T20N06HD

N-Channel60-V(D-S)MOSFET

TF20N06

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GeneralFeatures ●VDS=60V,ID=20A RDS(ON)