RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

文件：282.49 Kbytes 页数：6 Pages

ADPOW

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

文件：99.08 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：299.09 Kbytes 页数：4 Pages

ADPOW

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：198.65 Kbytes 页数：4 Pages

MICROSEMI

美高森美

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The MRF586 is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications.

文件：17.8 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. FEATURES: • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure • Diffused Ballast Resistors • Omnigold™ Metalization System

文件：17.9 Kbytes 页数：1 Pages

ASI

The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz

The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low noise figure — NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90

文件：341.18 Kbytes 页数：12 Pages

MA-COM

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

文件：155.93 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

文件：136.41 Kbytes 页数：8 Pages

MACOM

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz

文件：174.09 Kbytes 页数：5 Pages

MICROSEMI

美高森美