N-CHANNEL BROADBAND RF POWER FET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512

文件：142.38 Kbytes 页数：8 Pages

Motorola

摩托罗拉

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range.

文件：32.14 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product (min) @ 60mA · Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

文件：320.83 Kbytes 页数：5 Pages

Microsemi

美高森美

NPN RF POWER TRANSISTOR

DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting

文件：13.77 Kbytes 页数：1 Pages

ASI

1NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System

文件：32.42 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. FEATURES: • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System

文件：99.73 Kbytes 页数：1 Pages

ASI

RF POWER TRANSISTOR NPN SILICON

文件：109.44 Kbytes 页数：3 Pages

Motorola

摩托罗拉

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

文件：119.94 Kbytes 页数：3 Pages

Motorola

摩托罗拉

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

文件：119.94 Kbytes 页数：3 Pages

Motorola

摩托罗拉

HIGH-FREQUENCY TRANSISTOR PNP SILICON

The RF Line PNP Silicon High-Frequency Transistor Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = –35 mA

文件：151.87 Kbytes 页数：8 Pages

Motorola

摩托罗拉