MRF5035

N-CHANNEL BROADBAND RF POWER FET

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin12.5voltmobile,andbasestationFMequipment. •GuaranteedPerformanceat512

MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features ·SiliconNPN,To-39packagedVHF/UHFTransistor ·Gpe=10dB(typ)@60mA,300MHz ·3GHzCurrent-GainBandwidthProduct(min)@60mA ·BroadbandNoiseFigure=7.5dB@50mA,300MHz

MRF517

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: TheASIMRF517isDesignedforHighLinearityClassAAmplifierApplicationsinthe100to500MHzFrequencyRange.

MRF5174

NPN RF POWER TRANSISTOR

DESCRIPTION: TheMRF5174isaCommonEmitterDeviceDesignedforClassA,ABandCAmplifierApplicationsinthe225to400MHzBand. FEATURESINCLUDE: •HighGain •GoldMetallization •EmitterBallasting

MRF5175

1NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF5175isDesignedforHighPowerClassCAmplifierin,225to400MHzMilitaryCommunication Equipment. FEATURES: •ClassCOperation •PG=11dBat5.0W/400MHz •Omnigold™MetalizationSystem

MRF5176

RF POWER TRANSISTOR NPN SILICON

MRF5176

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF5176isDesignedforClassCAmplifiersin225to400MHzMilitaryCommunicationEquipment. FEATURES: •PG=10dBTypicalat400MHz •Economical.280”StudPackage •Omnigold™MetalizationSystem

MRF5177

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

MRF5177A

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

MRF5211LT1

HIGH-FREQUENCY TRANSISTOR PNP SILICON

TheRFLine PNPSiliconHigh-FrequencyTransistor Designedprimarilyforuseinthehigh–gain,low–noisesmall–signalamplifiersforoperationupto3.5GHz.Alsousableinapplicationsrequiringfastswitchingtimes. •HighCurrentGain–BandwidthProduct— fT=3.4GHz(Typ)@IC=–35mA