MRF5技术资料参数贸易商飞思卡尔BEL第9页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF5P21240HR6	文件：565.53 Kbytes Page：12 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications 文件：565.53 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5P21240R6	文件：782.96 Kbytes Page：8 Pages	RF POWER FIELD EFFECT TRANSISTOR The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell 文件：782.96 Kbytes 页数：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF5S19060NBR1	文件：495.24 Kbytes Page：16 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, commonsource amplifier ap 文件：495.24 Kbytes 页数：16 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S19060NR1	文件：495.24 Kbytes Page：16 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, commonsource amplifier ap 文件：495.24 Kbytes 页数：16 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S19090HR3	文件：423.4 Kbytes Page：12 Pages	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 文件：423.4 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S19090HSR3	文件：423.4 Kbytes Page：12 Pages	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 文件：423.4 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S19090LR3	文件：412.95 Kbytes Page：12 Pages	1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for 文件：412.95 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF5S19090LSR3	文件：412.95 Kbytes Page：12 Pages	1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for 文件：412.95 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF5S19100HD	文件：726.87 Kbytes Page：12 Pages	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD 文件：726.87 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MRF5S19100HR3	文件：726.87 Kbytes Page：12 Pages	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD 文件：726.87 Kbytes 页数：12 Pages	MOTOROLA 摩托罗拉	MOTOROLA

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晶体管资料

型号：
MRF501
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
超高频/特高频（UHF）_前置放大（V）_混频（M）
封装形式：
直插封装
极限工作电压：
最大电流允许值：
最大工作频率：
1000MHZ
引脚数：
4
可代换的型号：
BF357,BF377,BF378,3DG44A,
最大耗散功率：
放大倍数：
图片代号：
D-13
vtest：
0
htest：
1000000000
atest：
0
wtest：
0

技术参数

Peak Reverse Repetitive Voltage：
5000V
Peak Reverse Recovery Time：
150ns
Peak Reverse Current：
0.5uA
Peak Non-Repetitive Surge Current：
50A
Peak Forward Voltage：
9V
Maximum Continuous Forward Current：
0.5A
Configuration：
Single

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	MRF5035	MOT	97+	高频管	2255	全新原装进口自己库存优势	询价
深圳市联世界科技有限公司	MRF5S19090LSR3	MOTOROLA	24+/25+		105	原装正品现货库存价优	询价
芯有半导体（深圳）有限公司	MRF5S21100HS	FREESCALE	05/06+		1008	全新原装100真实现货供应	询价
深圳市勤思达科技有限公司	MRF5015	东芝			100	原装现货,价格优惠	询价
深圳市粤科源兴科技有限公司	MRF5035	MOTOROLA	13+	TO-57	6878	原装分销	询价
深圳市恒创达实业有限公司	MRF5S21045N	FREESCAIE	17+	SMD	6200	100%原装正品现货	询价
深圳市毅创腾电子科技有限公司	MRF5S9101N	MOTOROLA	23+	高频管	1200	专营高频管模块,全新原装!	询价
深圳市欧立现代科技有限公司	MRF5S21090L	MOTOROLA	24+		12	原装现货,可开13%税票	询价
深圳市卓越微芯电子有限公司	MRF571	ASI	25+	SOT143	3	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	MRF571	MOT	24+		50	本站现货库存	询价

更多MRF5供应商更新时间2026-1-27 20:38:00

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