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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF5S9080NR1	文件：744.77 Kbytes Page：20 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts 文件：744.77 Kbytes 页数：20 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9100MBR1	文件：442.7 Kbytes Page：12 Pages	N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati 文件：442.7 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9100MR1	文件：442.7 Kbytes Page：12 Pages	N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati 文件：442.7 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9100NBR1	文件：442.7 Kbytes Page：12 Pages	N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati 文件：442.7 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9100NR1	文件：442.7 Kbytes Page：12 Pages	N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati 文件：442.7 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9101MBR1	文件：541.64 Kbytes Page：20 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, 文件：541.64 Kbytes 页数：20 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9101MR1	文件：541.64 Kbytes Page：20 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, 文件：541.64 Kbytes 页数：20 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9101NBR1	文件：541.64 Kbytes Page：20 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, 文件：541.64 Kbytes 页数：20 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9101NR1	文件：541.64 Kbytes Page：20 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, 文件：541.64 Kbytes 页数：20 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE
MRF5S9150HR3	文件：531.96 Kbytes Page：12 Pages	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 880 MHz, 33 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Po 文件：531.96 Kbytes 页数：12 Pages	FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	FREESCALE

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晶体管资料

型号：
MRF501
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
超高频/特高频（UHF）_前置放大（V）_混频（M）
封装形式：
直插封装
极限工作电压：
最大电流允许值：
最大工作频率：
1000MHZ
引脚数：
4
可代换的型号：
BF357,BF377,BF378,3DG44A,
最大耗散功率：
放大倍数：
图片代号：
D-13
vtest：
0
htest：
1000000000
atest：
0
wtest：
0

技术参数

Peak Reverse Repetitive Voltage：
5000V
Peak Reverse Recovery Time：
150ns
Peak Reverse Current：
0.5uA
Peak Non-Repetitive Surge Current：
50A
Peak Forward Voltage：
9V
Maximum Continuous Forward Current：
0.5A
Configuration：
Single

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	MRF5035	MOT	97+	高频管	2255	全新原装进口自己库存优势	询价
深圳市联世界科技有限公司	MRF5S19090LSR3	MOTOROLA	24+/25+		105	原装正品现货库存价优	询价
芯有半导体（深圳）有限公司	MRF5S21100HS	FREESCALE	05/06+		1008	全新原装100真实现货供应	询价
深圳市勤思达科技有限公司	MRF5015	东芝			100	原装现货,价格优惠	询价
深圳市粤科源兴科技有限公司	MRF5035	MOTOROLA	13+	TO-57	6878	原装分销	询价
深圳市恒创达实业有限公司	MRF5S21045N	FREESCAIE	17+	SMD	6200	100%原装正品现货	询价
深圳市毅创腾电子科技有限公司	MRF5S9101N	MOTOROLA	23+	高频管	1200	专营高频管模块,全新原装!	询价
深圳市欧立现代科技有限公司	MRF5S21090L	MOTOROLA	24+		12	原装现货,可开13%税票	询价
深圳市卓越微芯电子有限公司	MRF571	ASI	25+	SOT143	3	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	MRF571	MOT	24+		50	本站现货库存	询价

更多MRF5供应商更新时间2026-1-28 8:01:00

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