| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applic 文件：379.67 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applic 文件：379.67 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：395.98 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
To be Used in class AB for PCN-PCS/cellularradio and WLL applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：395.98 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra 文件：564.96 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra 文件：564.96 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula 文件：404.48 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl 文件：386.57 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL appl 文件：386.57 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellula 文件：404.48 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
超高频/特高频 （UHF）_前置放大 （V）_混频 （M）
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
- 最大工作频率：
1000MHZ
- 引脚数：
4
- 可代换的型号：
BF357,BF377,BF378,3DG44A,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
D-13
- vtest：
0
- htest：
1000000000
- atest：
0
- wtest：
0
技术参数
- Peak Reverse Repetitive Voltage：
5000V
- Peak Reverse Recovery Time：
150ns
- Peak Reverse Current：
0.5uA
- Peak Non-Repetitive Surge Current：
50A
- Peak Forward Voltage：
9V
- Maximum Continuous Forward Current：
0.5A
- Configuration：
Single
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
97+ |
高频管 |
2255 |
全新原装进口自己库存优势 |
询价 | ||
MOTOROLA |
24+/25+ |
105 |
原装正品现货库存价优 |
询价 | |||
FREESCALE |
05/06+ |
1008 |
全新原装100真实现货供应 |
询价 | |||
东芝 |
100 |
原装现货,价格优惠 |
询价 | ||||
MOTOROLA |
13+ |
TO-57 |
6878 |
原装分销 |
询价 | ||
FREESCAIE |
17+ |
SMD |
6200 |
100%原装正品现货 |
询价 | ||
MOTOROLA |
23+ |
高频管 |
1200 |
专营高频管模块,全新原装! |
询价 | ||
MOTOROLA |
24+ |
12 |
原装现货,可开13%税票 |
询价 | |||
ASI |
25+ |
SOT143 |
3 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MOT |
24+ |
50 |
本站现货库存 |
询价 |
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