NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF5943C is a High Frequency Transistor for General Purpose Amplifier Applications.

文件：31.86 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators Features • Maximum Available Gain = 17dB @ 300MHz • High fT – 1.2 GHz typical

文件：92.79 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz

文件：174.09 Kbytes 页数：5 Pages

MICROSEMI

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz

文件：174.09 Kbytes 页数：5 Pages

MICROSEMI

美高森美

RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：582.43 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

文件：365.97 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：582.43 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

2110-2170 MHz, 10 W AVG., 28 V 2 x W-CDMA, DUAL PATH LATERAL N-CHANNEL RF POWER MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single

文件：421.99 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

SEMICONDUCTOR TECHNICAL DATA

2170 MHz, 180 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

文件：390 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTOR

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：782.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉