| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID 文件：580.51 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID 文件：580.51 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD 文件：726.87 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
Suitable for TDMA, CDMA and multicarrier amplifier applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = 文件：415.16 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
Suitable for TDMA, CDMA and multicarrier amplifier applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = 文件：415.16 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD 文件：417.65 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD 文件：417.65 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 1930-1990 MHz, 32 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = 文件：439.88 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 1930-1990 MHz, 32 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = 文件：439.88 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：557.3 Kbytes 页数：16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
超高频/特高频 （UHF）_前置放大 （V）_混频 （M）
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
- 最大工作频率：
1000MHZ
- 引脚数：
4
- 可代换的型号：
BF357,BF377,BF378,3DG44A,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
D-13
- vtest：
0
- htest：
1000000000
- atest：
0
- wtest：
0
技术参数
- Peak Reverse Repetitive Voltage：
5000V
- Peak Reverse Recovery Time：
150ns
- Peak Reverse Current：
0.5uA
- Peak Non-Repetitive Surge Current：
50A
- Peak Forward Voltage：
9V
- Maximum Continuous Forward Current：
0.5A
- Configuration：
Single
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
97+ |
高频管 |
2255 |
全新原装进口自己库存优势 |
询价 | ||
MOTOROLA |
24+/25+ |
105 |
原装正品现货库存价优 |
询价 | |||
FREESCALE |
05/06+ |
1008 |
全新原装100真实现货供应 |
询价 | |||
东芝 |
100 |
原装现货,价格优惠 |
询价 | ||||
MOTOROLA |
13+ |
TO-57 |
6878 |
原装分销 |
询价 | ||
FREESCAIE |
17+ |
SMD |
6200 |
100%原装正品现货 |
询价 | ||
MOTOROLA |
23+ |
高频管 |
1200 |
专营高频管模块,全新原装! |
询价 | ||
MOTOROLA |
24+ |
12 |
原装现货,可开13%税票 |
询价 | |||
ASI |
25+ |
SOT143 |
3 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MOT |
24+ |
50 |
本站现货库存 |
询价 |
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